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arXiv · 2408.04136

Berry curvature contribution towards $ 1s-2p_{\pm} $ interlayer exciton ultrafast transition within a $R-WSe_{2}/MoSe_{2} $ heterobilayer

Abstract

We calculate the spectrum of interlayer neutral excitons in transition-metal-dichalcogenide WeSe$_2$/MoSe$_2$ heterobilayers in the $R$-stacking configuration. Most saliently, we show that, similarly to neutral excitons and trions in monolayer transition-metal dichalcogenides, the spectrum is sensitive to the Berry curvature and thus quantum-geometric effects underlying the electron and hole wave functions. Due to the spatial separation between the electron and hole constituting the exciton in different layers, the Berry-curvature-induced splitting of the between the $2p_+$ and the $2p_-$ exciton states is smaller than for monolayer excitons. Furthermore, we investigate the dependence of the exciton spectra on the dielectric environment and the twist angle between the two layers. Finally, the long-lived moir\'e interlayer exciton ground state ($1s$) enhances the possibility of creating brightened $2p_{\pm}$ states using a circularly polarized medium-infrared probe from the $1s$ ground state. As a result, we determine the polarizability of the $1s-2p_{\pm}$ transition, following by two-level dressed model for the optical Stark effect.

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Houssem Eddine Hannachi, Mark-Oliver Goerbig, Sihem Jaziri. 2024-08-08. Berry curvature contribution towards $ 1s-2p_{\pm} $ interlayer exciton ultrafast transition within a $R-WSe_{2}/MoSe_{2} $ heterobilayer. https://arxiv.org/abs/2408.04136

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