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arXiv · 2408.07338

Symmetric n-and p-Type Sub-5-nm 1D Graphene Nanoribbon Transistors for Homogeneous CMOS Applications

Linqiang Xu·Shiqi Liu·Qiuhui Li·Ying Li·Shibo Fang·Ying Guo·Yee Sin Ang·Chen Yang·Jing Lu
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Abstract

Graphene nanoribbon (GNR) emerges as an exceptionally promising channel candidate due to its tunable sizable bandgap (0-3 eV), ultrahigh carrier mobility (up to 4600 cm^(2) V^(-1) s^(-1)), and excellent device performance (current on-off ratio of 10^(7)). However, the asymmetry of reported n-type and p-type GNR field-effect transistors (FETs) at ultrashort gate length (Lg) has become an obstacle to future complementary metal-oxide-semiconductor (CMOS) integration. Here, we conduct ab initio quantum transport simulations to investigate the transport properties of sub-5-nm Lg 7 armchair-edge GNR (7 AGNR) FETs. The on-state current, delay time, and power dissipation of the n-type and p-type 7 AGNR FETs fulfill the International Technology Roadmap for Semiconductors targets for high-performance devices when Lg is reduced to 3 nm. Remarkably, the 7 AGNR FETs exhibit superior n-type and p-type symmetry to the 7-9-7 AGNR FETs due to the more symmetrical electron/hole effective masses. Compared to the monolayer MoS2 and MoTe2 counterparts, the 7 AGNR FETs have better device performance, which could be further improved via gate engineering. Our results shed light on the immense potential of 7 AGNR in advancing CMOS electronics beyond silicon.

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Linqiang Xu, Shiqi Liu, Qiuhui Li, Ying Li, Shibo Fang, Ying Guo, Yee Sin Ang, Chen Yang, Jing Lu. 2024-08-14. Symmetric n-and p-Type Sub-5-nm 1D Graphene Nanoribbon Transistors for Homogeneous CMOS Applications. https://arxiv.org/abs/2408.07338

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