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arXiv · 2408.08124

Sub-terahertz field emission transistors with selfpackaged microcavities

Yuxiang Huang·Ziqi Ke·Wenlong He
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Abstract

This paper presents the design of a vertical structure terahertz field emission transistor that utilizes a high-angle oblique deposition method to form a self-packaged vacuum microcavity. The simulation demonstrates that the self-packaged microcavity can effectively mitigate the potential impact of conventional field emission transistors on surrounding solid-state circuits, thereby improving the frequency performance and stability of the device. The proposed design exhibits a cutoff frequency at the sub-terahertz level.

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Yuxiang Huang, Ziqi Ke, Wenlong He. 2024-08-15. Sub-terahertz field emission transistors with selfpackaged microcavities. https://arxiv.org/abs/2408.08124

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