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arXiv · 2409.04586

Etching Properties of PIN-PMN-PT and its Integration in Electro-Optic Phase Modulators

Salvador Poveda-Hospital·Nicolás Quesada·Yves-Alain Peter
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Abstract

We investigate the etching characteristics of PIN-PMN-PT crystals, exploring various wet etching solutions, reactive ion etching gases, and ion beam etching. The etch rate and surface roughness are systematically measured for each method. A process flow to obtain PIN-PMN-PT thin films is described and performed to later build a single mode rib waveguide. An integrated electro-optic phase modulator is fabricated by depositing electrodes on the sides of the waveguides. The electro-optic coefficient implied in our phase modulators is the $r_{51}/r_{42}$. The performances are tested achieving a $V_\pi L$ of 19.2 V$\cdot$cm.

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Salvador Poveda-Hospital, Nicolás Quesada, Yves-Alain Peter. 2024-09-06. Etching Properties of PIN-PMN-PT and its Integration in Electro-Optic Phase Modulators. https://arxiv.org/abs/2409.04586

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