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arXiv · 2409.06686

Stabilization of a two-dimensional quantum electron solid in perpendicular magnetic fields

M. Yu. Melnikov·D. G. Smirnov·A. A. Shashkin·S. -H. Huang·C. W. Liu·S. V. Kravchenko
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Abstract

We find that the double-threshold voltage-current characteristics in the insulating regime in the ultra-clean two-valley two-dimensional electron system in SiGe/Si/SiGe quantum wells are promoted by perpendicular magnetic fields, persisting to an order of magnitude lower voltages and considerably higher electron densities compared to the zero-field case. This observation indicates the perpendicular-magnetic-field stabilization of the quantum electron solid.

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M. Yu. Melnikov, D. G. Smirnov, A. A. Shashkin, S. -H. Huang, C. W. Liu, S. V. Kravchenko. 2024-09-10. Stabilization of a two-dimensional quantum electron solid in perpendicular magnetic fields. https://doi.org/10.1103/physrevb.111.l041301

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