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arXiv · 2409.07342

Doping Tunable CDW Phase Transition in Bulk 1T-ZrSe$_2$

Andreas Ørsted·Alessandro Scarfato·Céline Barreteau·Enrico Giannini·Christoph Renner
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Abstract

Tuneable electronic properties in transition metal dichalcogenides (TMDs) are essential to further their use in device applications. Here, we present a comprehensive scanning tunnelling microscopy and spectroscopy study of a doping-induced charge density wave (CDW) in semiconducting bulk 1T-ZrSe$_2$. We find that atomic impurities which locally shift the Fermi level ($E_F$) into the conduction band trigger a CDW reconstruction concomitantly to the opening of a gap at $E_F$. Our findings shed new light on earlier photoemission spectroscopy and theoretical studies of bulk 1T-ZrSe$_2$, and provide a local understanding of the electron-doping mediated CDW transition observed in semiconducting TMDs.

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Andreas Ørsted, Alessandro Scarfato, Céline Barreteau, Enrico Giannini, Christoph Renner. 2024-09-11. Doping Tunable CDW Phase Transition in Bulk 1T-ZrSe$_2$. https://doi.org/10.1021/acs.nanolett.4c06377

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