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arXiv · 2409.08540

Artificial moir\'{e} engineering for an ideal BHZ model

Wangqian Miao·Arman Rashidi·Xi Dai
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Abstract

We demonstrate that (001) grown Cd3As2 thin films with a superlattice-patterned gate can potentially realize the moir\'e Bernevig-Hughes-Zhang (BHZ) model. Our calculations identify the parameterization region necessary to achieve topological flat mini-bands with a C4z symmetric and a C6z symmetric potential. Additionally, we show that a spin-polarized state can serve as the minimal platform for hosting the moir\'e induced quantum anomalous Hall effect, supported by Hartree Fock interaction kernel analysis and self-consistent mean field calculations.

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Wangqian Miao, Arman Rashidi, Xi Dai. 2024-09-13. Artificial moir\'{e} engineering for an ideal BHZ model. https://doi.org/10.1103/physrevb.111.045113

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