Achieving Different Stoichiometries and Morphologies in Vapor Phase Deposition of Inorganic Halide Perovskites: Single or Dual Precursor Sources?

Abstract

Inorganic halide perovskites have become attractive for many optoelectronic applications due to their outstanding properties. While chemical synthesis techniques have been successful in producing high-quality perovskite crystals, scaling up to wafer-scale thin films remains challenging. Vapor deposition methods, particularly physical vapor deposition and chemical vapor deposition, have emerged as potential solutions for large-scale thin film fabrication. However, the control of phase purity during deposition remains problematic. Here, we investigate single-source (CsPbBr3) and dual-source (CsBr and PbBr2) vapor deposition techniques to achieve phase-pure CsPbBr3 thin films. Utilizing Knudsen Effusion Mass Spectrometry, we demonstrate that while the single-source CsPbBr3 evaporation is partially congruent, it leads to compositional changes in the evaporant over time. The dual-source evaporation, with a precise control of the PbBr2/CsBr flux ratio, can improve phase purity, particularly at elevated substrate temperatures at excess PbBr2 conditions. Our results give direct evidence that the growth is CsBr-limited. Overall, our findings provide critical insights into the vapor phase deposition processes, highlighting the importance of evaporation conditions in achieving the desired inorganic perovskite stoichiometry and morphology.