Reducing disorder in Ge quantum wells by using thick SiGe barriers

Abstract

We investigate the disorder properties of two-dimensional hole gases in Ge/SiGe heterostructures grown on Ge wafers, using thick SiGe barriers to mitigate the influence of the semiconductor-dielectric interface. Across several heterostructure field effect transistors we measure an average maximum mobility of $(4.4 \pm 0.2) \times 10^{6}~\mathrm{cm^2/Vs}$ at a saturation density of $(1.72 \pm 0.03) \times 10^{11}~\mathrm{cm^{-2}}$, corresponding to a long mean free path of $(30 \pm 1)~\mathrm{\mu m}$. The highest measured mobility is $4.68 \times 10^{6}~\mathrm{cm^2/Vs}$. We identify uniform background impurities and interface roughness as the dominant scattering mechanisms limiting mobility in a representative device, and we evaluate a percolation-induced critical density of $(4.5 \pm 0.1)\times 10^{9} ~\mathrm{cm^{-2}}$. This low-disorder heterostructure, according to simulations, may support the electrostatic confinement of holes in gate-defined quantum dots.