Electron g-factor of strained Ge caused by the SiGe substrate and its dependence on growth directions

K. Imakire; A. Oiwa; Y. Tokura

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arXiv · 2411.01148

Electron g-factor of strained Ge caused by the SiGe substrate and its dependence on growth directions

K. Imakire·A. Oiwa·Y. Tokura

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Abstract

For photon-spin conversion, the Ge hole system in a strained GeSi/Ge quantum well with a diamond structure has attracted significant attention because of the potential for a high-performance spin qubit and optical transitions ranging in telecom bands. We calculated the electron g-factor for strained Ge, analyzing its dependence on both the growth directions ([100], [110], and [111]) and the Ge content of the SiGe substrate using an 8-band model. Our results indicate that the absolute values of the electron g-factor decrease with decreasing Ge content, ranging from approximately -3.0 to -1.4 for all growth directions.

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K. Imakire, A. Oiwa, Y. Tokura. 2024-11-02. Electron g-factor of strained Ge caused by the SiGe substrate and its dependence on growth directions. https://arxiv.org/abs/2411.01148

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