SearcharxivSearch

arXiv · 2411.12340

First-Principles Insights into Metallic Doping Effects on Yttrium {10-10} Grain Boundary

Abstract

Yttrium and its alloys are promising materials for high-tech applications, particularly in aerospace and nuclear reactors. The doping of metallic elements at grain boundaries can significantly influence the stability, strength, and mechanical properties of these materials; however, studies on solute segregation effects in Y-based alloys remain scarce. To address this gap, we employs first-principles calculations to systematically examine the effects of doping with 34 metallic elements on the properties of a highly symmetric twin grain boundary in yttrium. All solute elements exhibit a tendency to segregate to regions near the grain boundary, driven by segregation energy.energy barriers influence these elements to prefer segregation positions farther from the grain boundary line. the strengthening energy calculations reveal that all dopant elements enhance grain boundary strength when located near the boundary. For grain boundary energy and solubility trends, elements within the same transition metal group across different periods display consistent behaviors. And considering grain boundary energy effects, we identify 11 elements (Al, Zn, Rh, Pd, Ag, Cd, Sn, Ir, Pt, Au, Hg) that preferentially segregate near the grain boundary, where they contribute to grain boundary strengthening and enhanced stability. By decomposing the strengthening energy into mechanical, chemical, and vacancy formation components, chemical contribution is the primary factor in strengthening, while the mechanical contribution of transition metals correlates with changes in the Voronoi volume and relative atomic radius of the solute. The density of states analysis indicates that increased grain boundary stability arises mainly from hybridization between solute d orbitals and yttrium, leading to more stable electronic states. This study provides theoretical guidance for optimizing metallic dopants in Y-based alloys.

Explore related subjects

Keep this discovery

BibTeXRIS

Guanlin Lyu, Yuguo Sun, Ping Qian, Panpan Gao. 2024-11-19. First-Principles Insights into Metallic Doping Effects on Yttrium {10-10} Grain Boundary. https://arxiv.org/abs/2411.12340

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

Measuring chiral phonons

Chiral phonons are quantized vibrations where the atomic motion in a solid breaks improper rotation symmetries. In many cases, chiral phonons possess angular momenta and are therefore selective to circularly polarized light. Both fundamental and applied research efforts on chiral phonons have been gaining increasing attention owing to their importance in a variety of fields including spintronics, spin-selective chemical reactions, thermal transport, quantum information processing and biosensing, where the bi-directional spin-lattice coupling enabled by chiral phonons can be harnessed in new ways, and potentially lead to new functionalities. Thus far, the studies of chiral phonons across diverse materials platforms have evolved largely independently within these fields, but the experimental techniques are often interrelated. In this perspective, we present a detailed description, as well as advantages and disadvantages of the current approaches for experimentally measuring chiral phonons in chiral and achiral materials. We conclude with a discussion of new methods for measuring chiral phonons. Ultimately, this work seeks to offer an experimental guide for systematically investigating the properties of chiral phonons in various materials systems and applications.

cond-mat.mtrl-sci

A model of grain growth in UN integrating molecular dynamics, phase-field modeling, and uncertainty quantification

Grain growth kinetics and grain-boundary (GB) properties in uranium mononitride (UN) are investigated through an integrated multiscale framework combining molecular dynamics (MD), phase-field modeling, and surrogate-assisted uncertainty quantification. MD simulations yield GB energies for 27 symmetric tilt boundaries from 0--2000~K, which are consistent with available DFT values. The average GB energy is nearly temperature-independent below 1000~K and increases at higher temperatures. A mechanistic pore-drag model applied to the only available grain growth dataset for actinide nitrides yields a mobility reduction factor of $s \approx 0.93$--$0.99$, statistically indistinguishable from unity, confirming that pore drag is negligible under the experimental conditions. The intrinsic GB mobility is therefore extracted directly from the effective mobility, yielding $M_0 = 2.05\times10^{-15}$~m$^4$/(J$\cdot$s) and $Q_M = 0.89$~eV. Phase-field simulations conducted from 1500--2000~K confirm normal curvature-driven grain growth, with grain size distributions converging to the Hillert-like form. A surrogate-assisted global sensitivity analysis---combining principal component analysis, Gaussian process regression, and Sobol decomposition---reveals that the mobility prefactor $M_0$ dominates output variance at all times, followed by the activation energy $Q_M$, while the GB energy $\gamma$ contributes minimally. These results establish the first quantitative grain growth framework for UN and identify the reduction of uncertainty in $M_0$ and $Q_M$ as the highest-priority target for future experimental efforts.

cond-mat.mtrl-sci

Silicon Solar Cell Design for >30% Efficiency via Singlet Fission

Singlet fission (SF) materials convert high-energy photons into multiple charge carriers, providing a route to exceed the efficiency limits of single-junction silicon solar cells without many of the complexities of multi-junction tandem designs. Following the first demonstration of an SF-enhanced silicon solar cell in 2025, there is a need to understand how SF materials can be effectively integrated into high-efficiency industrial silicon devices and translated from proof of concept to a manufacturable technology. Using coupled optical and electrical simulations, we assess the efficiency potential of several industrially relevant silicon cell architectures combined with SF materials. Interdigitated back-contact (IBC) cells offer the greatest potential for improvement due to unrestricted front-surface access and can achieve efficiencies exceeding 33%. However, performance is highly sensitive to front-surface passivation quality. Appropriate silicon design, particularly controlled surface doping and fixed interfacial charge, can mitigate recombination losses and relax passivation requirements for ultra-thin exciton-transfer layers.

cond-mat.mtrl-sci