Active quantum memory: Exploring the quantum dynamical process of voltage-gated ion channel

Abstract

It is known that the opening or closing mechanism of a voltage-gated ion channel is triggered by the potential difference across the cell membrane in the nervous system. Based on this picture, we model the ion channel as a nanoscale two-terminal ionic tunneling junction. We apply an external time-varying voltage on the junction to mimic the membrane potential difference in the stimulation of neurons. We derive the non-Markovian quantum Langevin equation from the first principle of quantum mechanics for the ion transport in ion channels, and obtain the ion transport current in terms of quantum tunnelings of ions controlled by the time-varying voltage. We find that the time-varying voltage induces an effective magnetic flux, which causes quantum coherence in ion tunnelings. This effective magnetic flux induces further an oscillatory component to the spectral structure of the ion system, forming a time-dependent quantum memory. Such voltage-induced memory is defined as the active quantum memory, which manifests in the system with a regular oscillatory sideband structure in the ion transport current. The sideband structure demonstrates a multi-crossing hysteresis in the I-V curve, responding to the variation of the time-varying voltage (membrane potential difference). We also find that the strength of active quantum memory can be described by the ratio of amplitude and frequency of the time-varying voltage, and can be quantitatively measured through the number of non-zero cross points in the current-voltage hysteresis and conductance-voltage diagram. Additionally, we explore the temperature dependence of the active quantum memory in such a system. Further, we apply this model to the ion channel system on the biological energy scale. The description of these active quantum memory characteristics provides a quantum mechanical understanding to the underlying mechanism of ion channel dynamics.