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arXiv · 2412.14279

Gated-Channel Conductivity Modulation by Hole Storage Effect Under Pulsed Conditions in p-GaN Gate Double Channel HEMT

Hang Liao·Zheyang Zheng·Ji Shu·Kevin J. Chen
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Abstract

Recently, a p-GaN gate double channel HEMT (DC-HEMT) with conductivity modulation has been reported. The conductivity modulation is realized by hole storage in the gate stack and observed under quasi-static measurements. In this work, pulsed measurement and transient simulations of the DC-HEMT are carried out to disclose the conductivity modulation at high frequency and build-up time of hole storage. It takes 150 ns for the hole storage to be completely established despite a Schottky gate in the DC-HEMT with low gate leakage. The fast build-up of hole storage is attributed to the AlN insertion layer's strong confinement capability of holes and suppressed electron-hole recombination in the DC structure.

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Hang Liao, Zheyang Zheng, Ji Shu, Kevin J. Chen. 2024-12-18. Gated-Channel Conductivity Modulation by Hole Storage Effect Under Pulsed Conditions in p-GaN Gate Double Channel HEMT. https://arxiv.org/abs/2412.14279

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