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arXiv · 2412.14565

Thermal circuit model for silicon quantum-dot array structures

Takeru Utsugi·Nobuhiro Kusuno·Takuma Kuno·Noriyuki Lee·Itaru Yanagi·Toshiyuki Mine·Shinichi Saito·Digh Hisamoto·Ryuta Tsuchiya·Hiroyuki Mizuno
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Abstract

Temperature rise of qubits due to heating is a critical issue in large-scale quantum computers based on quantum-dot (QD) arrays. This leads to shorter coherence times, induced readout errors, and increased charge noise. Here, we propose a simple thermal circuit model to describe the heating effect on silicon QD array structures. Noting that the QD array is a periodic structure, we represent it as a thermal distributed-element circuit, forming a thermal transmission line. We validate this model by measuring the electron temperature in a QD array device using Coulomb blockade thermometry, finding that the model effectively reproduces experimental results. This simple and scalable model can be used to develop the thermal design of large-scale silicon-based quantum computers.

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Takeru Utsugi, Nobuhiro Kusuno, Takuma Kuno, Noriyuki Lee, Itaru Yanagi, Toshiyuki Mine, Shinichi Saito, Digh Hisamoto, Ryuta Tsuchiya, Hiroyuki Mizuno. 2024-12-19. Thermal circuit model for silicon quantum-dot array structures. https://arxiv.org/abs/2412.14565

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