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arXiv · 2501.02517

STRAW: A Stress-Aware WL-Based Read Reclaim Technique for High-Density NAND Flash-Based SSDs

Myoungjun Chun·Jaeyong Lee·Inhyuk Choi·Jisung Park·Myungsuk Kim·Jihong Kim
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Abstract

Although read disturbance has emerged as a major reliability concern, managing read disturbance in modern NAND flash memory has not been thoroughly investigated yet. From a device characterization study using real modern NAND flash memory, we observe that reading a page incurs heterogeneous reliability impacts on each WL, which makes the existing block-level read reclaim extremely inefficient. We propose a new WL-level read-reclaim technique, called STRAW, which keeps track of the accumulated read-disturbance effect on each WL and reclaims only heavily-disturbed WLs. By avoiding unnecessary read-reclaim operations, STRAW reduces read-reclaim-induced page writes by 83.6\% with negligible storage overhead.

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Myoungjun Chun, Jaeyong Lee, Inhyuk Choi, Jisung Park, Myungsuk Kim, Jihong Kim. 2025-01-05. STRAW: A Stress-Aware WL-Based Read Reclaim Technique for High-Density NAND Flash-Based SSDs. https://arxiv.org/abs/2501.02517

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