Novel crossbar array of silicon nitride resistive memories on SOI enables memristor rationed logic

N Vasileiadis; A Mavropoulis; I Karafyllidis; G Ch Sirakoulis; P Dimitrakis

doi:10.1016/j.sse.2023.108819

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arXiv · 2502.02993

Novel crossbar array of silicon nitride resistive memories on SOI enables memristor rationed logic

N Vasileiadis·A Mavropoulis·I Karafyllidis·G Ch Sirakoulis·P Dimitrakis

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Abstract

In this work, the fabrication of crossbar arrays of silicon nitride resistive memories on silicon-on-insulator substrate and their utilization to realize multi-rationed logic circuits are presented. Typical electrical characterization of the memristors revealed their ability of multi-state operation by the presence of 12 well separated resistance levels. Through a dedicated modeling and fitting procedure of these levels, a reconfigurable logic based on memristor rationed logic scheme is designed and a crossbar integration methodology was proposed. Finally, several circuitry aspects were simulated in SPICE with a silicon nitride SOI crossbar array calibrated model and power optimization prospects were discussed.

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N Vasileiadis, A Mavropoulis, I Karafyllidis, G Ch Sirakoulis, P Dimitrakis. 2025-02-05. Novel crossbar array of silicon nitride resistive memories on SOI enables memristor rationed logic. https://doi.org/10.1016/j.sse.2023.108819

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