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arXiv · 2503.03130

Tunable Absorption in Near Infrared Based on Indium Tin Oxide

Shuaishuai Hou·Lin Cheng·Nan Meng·Naixin Liu·JianChang Yan·JinMin Li·Kun Huang
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Abstract

We propose a serrated ultra-broadband infrared absorber based on the multi-layer repetitive stacking of indium tin oxide (ITO) and silicon materials. This absorber achieves continuously tunable absorption within a wide infrared light range. By changing the size and materials of the absorber, its average absorption rate can reach a relatively high level. Simulation results reveal wavelength-dependent electric field localization: shorter wavelengths concentrate in narrower upper regions, while longer wavelengths localize in wider lower areas. This design offers potential applications in near-infrared detectors, optical communication, and smart windows.

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Shuaishuai Hou, Lin Cheng, Nan Meng, Naixin Liu, JianChang Yan, JinMin Li, Kun Huang. 2025-03-05. Tunable Absorption in Near Infrared Based on Indium Tin Oxide. https://arxiv.org/abs/2503.03130

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