arXiv · 2503.08132
Probing Electron Localization and Delocalization in the Selective Long-Range Tight-Binding Model
Abstract
In this study, we perform a detailed investigation into the interplay between disorder-induced electron localization and long-range hopping amplitudes within the Selective Long-Range Tight-Binding Model (SLRTB). Through numerical simulations, we analyze the electronic properties of the system, with a focus on the participation ratio (PR), entanglement entropy (EE), energy spectrum, and the ratio of level spacings ($r_n$). Our results reveal a marked distinction between negative and positive long-range hopping amplitudes, manifesting in different electronic behaviors and transitions. Notably, we carry out a finite-size scaling analysis, identifying the critical point and exponents that characterize the system's behavior near the transition. The investigation highlights the role of gapless regions in shaping the system's PR, $r_n$, and EE, and the influence of disorder on these properties. The SLRTB model proves to be an effective framework for understanding the effects of disorder and long-range hopping on electron dynamics, offering valuable insights into localization and delocalization phenomena.
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Mohammad Pouranvari. 2025-03-11. Probing Electron Localization and Delocalization in the Selective Long-Range Tight-Binding Model. https://doi.org/10.1140/epjb%2Fs10051-024-00802-4
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