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arXiv · 2503.22859

Epitaxial growth of KTiOAsO4 by pulsed laser deposition for nonlinear frequency conversion

Adrien Clavel·Mathieu Salaun·Lionel Bastard·Christophe Lepoittevin·Benoit Boulanger
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Abstract

Twin photons and triple photons generations require pump laser intensities of several hundred Mega Watts per square centimeter. Micrometer sized crystalline waveguides allow such interactions to be achieved at relatively low energies by taking advantage of the confinement of light. The materials selected to achieve these phenomena in the present work are from the titanyl phosphate family. The chosen architecture is a micrometric layer of KTA grown on a KTP substrate forming a planar waveguide in a first step. These two isostructural materials have a low lattice parameter mismatch, making it possible to achieve high quality epitaxial growth. The refractive index of KTA being higher than that of KTP, this couple of materials could allow light to be guided in the deposited layer. To grow the KTA film, the chosen technique is pulsed laser deposition (PLD) that allows nonlinear complex oxides layer of optical quality to be grown. In this study, we show that the growth is well oriented for layers with a thickness up to 200 nm after deposition. Then, after annealing, the crystal state is improved as well as the surface. In this study we demonstrate the feasibility of KTA epitaxy over KTP by PLD with good epitaxial quality, good orientation and theoretical phase-matching conditions for a planar KTA waveguide.

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Adrien Clavel, Mathieu Salaun, Lionel Bastard, Christophe Lepoittevin, Benoit Boulanger. 2025-03-28. Epitaxial growth of KTiOAsO4 by pulsed laser deposition for nonlinear frequency conversion. https://arxiv.org/abs/2503.22859

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