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arXiv · 2504.10349

Trapping potentials and quantum gates for microwave-dressed Rydberg atoms on an atom chip

Iason Tsiamis·Georgios Doultsinos·Andreas F. Tzortzakakis·Manuel Kaiser·Dominik Jakab·Andreas Günther·József Fortágh·David Petrosyan
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Abstract

Rydberg atoms in dc electric fields acquire static dipole moments. When the atoms are close to a surface producing an inhomogeneous electric field, such as by the adsorbates on an atom chip, depending on the sign of the dipole moment of the Rydberg-Stark eigenstate, the atoms may experience a force toward or away from the surface. We show that by applying a bias electric field and coupling a desired Rydberg state by a microwave field of proper frequency to another Rydberg state with opposite sign of the dipole moment, we can create a trapping potential for the atom at a prescribed distance from the surface. Perfectly overlapping trapping potentials for several Rydberg states can also be created by multicomponent microwave fields. A pair of such trapped Rydberg states of an atom can represent a qubit. Finally, we discuss an optimal realization of the SWAP gate between pairs of such atomic Rydberg qubits separated by a large distance but interacting with a common mode of a planar microwave resonator at finite temperature.

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Iason Tsiamis, Georgios Doultsinos, Andreas F. Tzortzakakis, Manuel Kaiser, Dominik Jakab, Andreas Günther, József Fortágh, David Petrosyan. 2025-04-14. Trapping potentials and quantum gates for microwave-dressed Rydberg atoms on an atom chip. https://doi.org/10.1103/d8w4-wbrj

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