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arXiv · 2504.14949

Photoinduced dc Hall current in few-layer black phosphorus with a gate-tunable Floquet gap

Taehun Kim·Hansol Kim·Dongeun Kim·Hongki Min
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Abstract

We theoretically explore Floquet engineering in few-layer black phosphorus (fBP) under time-periodic driving. Motivated by the ability of circularly polarized light to induce nontrivial topological states at Dirac nodes, we investigate the emergence of a photoinduced dc Hall effect in the Dirac semimetal phase of fBP. Starting from a low-energy continuum model, we derive the effective Floquet Hamiltonian and analytically calculate the Berry curvature, demonstrating the opening of a topological gap. We also perform lattice-model calculations incorporating a self-consistent Hartree method to compute Floquet band structures and dc Hall conductivity under a perpendicular electric field. Our results reveal that the dc Hall current in fBP can be effectively tuned via a periodic driving field and electrostatic gating.

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Taehun Kim, Hansol Kim, Dongeun Kim, Hongki Min. 2025-04-21. Photoinduced dc Hall current in few-layer black phosphorus with a gate-tunable Floquet gap. https://doi.org/10.1103/8c1n-8jh8

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