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arXiv · 2504.18548

Temperature-Dependent Emission Polarization in GaN Defect-Based Quantum Emitters

Yifei Geng
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Abstract

GaN defect-based quantum emitters show significant potential for quantum information technologies, yet their intrinsic nature is not fully understood. In this work, we present results on the temperature-dependent emission polarization of GaN defect single-photon emitters integrated with solid immersion lenses. The photoluminescence (PL) remains linearly polarized over the temperature range of 10K to 300K, with a slight rotation in the polarization direction observed at intermediate temperatures. Possible mechanisms underlying this behavior are analyzed, and a roadmap for future research is outlined.

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Yifei Geng. 2025-04-13. Temperature-Dependent Emission Polarization in GaN Defect-Based Quantum Emitters. https://arxiv.org/abs/2504.18548

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