Superconductivity in a semiconductor doped with the resonance negative U-centers

Serguei N. Burmistrov; Leonid B. Dubovskii

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arXiv · 2504.18963

Superconductivity in a semiconductor doped with the resonance negative U-centers

Serguei N. Burmistrov·Leonid B. Dubovskii

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Abstract

We study the effect of doping the semiconductor with the resonance negative U-centers upon its superconducting transition temperature. The attraction of electrons at the U-centers leads to the enhancement of transition temperature. On the contrary, the resonant scattering of conduction electrons along with their hybridization at the U-centers results in reducing the transition temperature. The largest effect on the superconducting transition temperature takes place if the resonance width is of the order of the energy level at the U-center. In the lack of the electron-phonon coupling under sufficiently low concentration of U-centers the superconducting transition is entirely absent in spite of the presence of attraction between electrons at U-centers.

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Serguei N. Burmistrov, Leonid B. Dubovskii. 2025-04-26. Superconductivity in a semiconductor doped with the resonance negative U-centers. https://arxiv.org/abs/2504.18963

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