SearcharxivSearch

arXiv · 2505.03167

Enhanced Patterned Fluorescence from Polystyrene through Focused Electron Beam Irradiation under Various Gases

Abstract

We report on a novel method for tuning and enhancing fluorescence from irradiated polystyrene through electron-beam exposure in gaseous environments. We describe the effect of electron dose and ambient gas on the photoluminescence spectra and yield of irradiated PS films on insulating and conductive substrates. PS films were exposed in an environmental scanning electron microscope using a 20 keV electron beam, ambient gas pressures from high vacuum to 3 mbar, and electron doses from 1.8 to 45 mC cm-2. Irradiated PS films were characterized using confocal microscopy, TEM, EDS and FTIR spectroscopy. From emission spectra collected using confocal microscopy we found that the emission wavelength and photon yield of the irradiated film can be tuned by both dose and gas pressure. The emission wavelength blue-shifts with increasing pressure and red-shifts with increasing dose enabling an overall tuning range of 451 - 544 nm. Significant enhancement in the PL intensity, up to 18 times on sapphire substrates under helium when compared to high vacuum, are observed. Overall, the highest PL yield is observed on soda lime glass substrates under argon. Also, the photon-yield on conductive substrates is significantly smaller than that yield from insulating substrates. TEM images revealed e-beam irradiated PS is amorphous in nature and elemental mapping EDS revealed no signs of film oxidation. FTIR spectroscopy revealed that under gaseous environments the decay of aromatic and aliphatic C-H stretches is reduced compared to the high vacuum exposure; in all cases, features associated with the phenyl rings are preserved. Localized e-beam synthesis of fluorophores in PS can be controlled by both dose and by ambient gas pressure. This technique could enable new approaches to photonics where fluorophores with tunable emission properties can be locally introduced by e-beam patterning.

Explore related subjects

Keep this discovery

BibTeXRIS

Deepak Kumar, Joseph W. Brill, J. Todd Hastings. 2025-05-06. Enhanced Patterned Fluorescence from Polystyrene through Focused Electron Beam Irradiation under Various Gases. https://arxiv.org/abs/2505.03167

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

Emergence of spin-orbit coupling among spin, atomic orbital, and Bloch dynamics in Janus double-transition-metal MXenes

We found a spin-orbit coupling to cause a simultaneous correlation among three degrees of freedom, the electronic spin, orbital, and Bloch dynamics in an investigation into the electronic structure of Janus double-transition-metal MXenes, Mo$_2$HfC$_2$OS and W$_2$HfC$_2$OS. In this paper, it is also revealed that the spin-orbit coupling causes a staggered spin configuration with a trigonal pattern around the $\Gamma$ point near the insulating gap. We developed a reduced Hamiltonian describing the electronic states and show that the spin-orbit coupling cannot be equated with conventional forms for a single electron in solids, LS, Rashba, and Dresselhaus couplings, even in the approximation under the low-energy and small wave number condition. Because of the intrinsic shape of the conduction band, a trigonally alternating spin-momentum locking emerges with the spin axis perpendicular to the layer plane. The theoretical analysis shows that these Janus materials can provide a platform for exploring the spin-related phenomena due to the trigonal spin-momentum locking other than Rashba and Dresselhaus types.

cond-mat.mes-hall

A substrate booster for P-type 2D ferromagnetic semiconductor

Spin transistors with its both charge and spin properties tuned via electrostatic gating are believed capable for widespread use, which however have proven challenging due to the extreme rareness of their physical base -- magnetic semiconductors. The latter are limited within very few systems including diluted magnetic semiconductors (DMS) and two-dimensional ferromagnetic semiconductors (2D-FMS), and known to suffer from inadequate gate-tunability of their electric and/or magnetic properties. Here, we show a substrate engineering paradigm by interfacing few-layered Cr$_{2}$Ge$_{2}$Te$_{6}$ (FL-CGT) with an antiferromagnetic insulator CrOCl. Owing to the subtle interfacial charge transfer couplings, CGT can be drastically turned from an ambipolar semiconductor into a high performance P-type semiconductor. When cooled below the Curie temperature, the ON-OFF ratio in such substrate-boosted FMS field-effect transistor (FET) reaches 10$^{5}$ with its coercive field $H_{c}$ of magnetic hysteresis loop tunable by a factor of more than 200$\%$, enabling {gate-assisted magnetic switching in the prototype semiconducting spin transistor architecture}. A crossover from critical power-law scaling to a dual power-law behaviour under heavy hole doping was further observed. Our findings {signify} an efficient interfacial charge transfer and electrically modulated magnetic anisotropy energy supported by calculations. This high performance P-type FMS-FET system suggests that active substrate-boosting paradigm might be a powerful path for the investigation of future gate-tunable spintronic devices.

cond-mat.mes-hall

In-plane magnetic field control of anomalous Hall response enabled by magnetic anisotropy engineering

Engineering magnetic anisotropy provides a powerful route to control magnetization orientation and unlock emerging functionalities in opto-spintronic and current-driven devices. Beyond its role in magnetization reversal, the effective anisotropy can strongly influence the magnetotransport response, offering an additional degree of freedom to tune new device functionalities. In this work, we report a magnetotransport study of a ferrimagnetic [Tb/Co]$_{\times 5}$ multilayer grown with a Tb thickness gradient, whose wedge-shaped tilts the uniaxial anisotropy axis slightly away from the film normal. Anomalous Hall resistivity measurements from 80 K to 300 K reveal a spin reorientation transition, while the angular dependence of the magnetotransport responses exposes the crucial role of the tilted anisotropy. A simplified macrospin model reproduces the full angular response across the transition and shows that the observed anomalous Hall effect when the in-plane magnetic field is applied originates from the tilt of the uniaxial anisotropy axis, which supplies a built-in symmetry-breaking mechanism, enabling in-plane field control over the out-of-plane anomalous Hall response, sign included. These findings establish tilted magnetic anisotropy as a promising route toward Hall effect-based sensor applications and highlight Tb/Co multilayers as a versatile platform for anisotropy-engineered spintronic devices.

cond-mat.mes-hall