SearcharxivSearch

arXiv · 2505.10853

Beyond surfaces: quantifying internal radiative heat transport in dense materials

Abstract

While phonons and electrons are well-established heat carriers in solids, photons are typically associated only with radiative transfer between surfaces. Yet for over 70 years, theorists have speculated that thermal photons could also conduct heat within dense, opaque materials -- an idea that has remained unproven and unquantified. Here, we resolve this longstanding question by developing a first-principles framework that reveals and quantifies the internal radiative contribution to thermal conductivity in solids. By analyzing 15 crystalline materials, we uncover photon mean free paths (MFPs) ranging from $\sim$100$\mu$m to over 1cm, with some materials exhibiting surprisingly large radiative thermal conductivity ($\kappa_{\text{rad}}$). Contrary to common assumptions, we show that $\kappa_{\text{rad}}$ can scale steeply with temperature (from $T^{1}$ to $T^{4}$), even as MFPs decrease (from $T^{-0.3}$ to $T^{-3}$). We also discover a robust link between photon MFP and phonon linewidths, revealing an unexpected interplay between radiative and phononic heat transport. Crucially, we establish a general formalism to calculate $\kappa_{\text{rad}}$ across arbitrary sample thicknesses and surface emissivities -- bridging ballistic and diffusive regimes. Our findings overturn long-held assumptions, uncover a missing channel of heat conduction, and provide a powerful new tool for thermal management in extreme environments.

Explore related subjects

Keep this discovery

BibTeXRIS

Janak Tiwari, Tianli Feng. 2025-05-16. Beyond surfaces: quantifying internal radiative heat transport in dense materials. https://arxiv.org/abs/2505.10853

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

Measuring chiral phonons

Chiral phonons are quantized vibrations where the atomic motion in a solid breaks improper rotation symmetries. In many cases, chiral phonons possess angular momenta and are therefore selective to circularly polarized light. Both fundamental and applied research efforts on chiral phonons have been gaining increasing attention owing to their importance in a variety of fields including spintronics, spin-selective chemical reactions, thermal transport, quantum information processing and biosensing, where the bi-directional spin-lattice coupling enabled by chiral phonons can be harnessed in new ways, and potentially lead to new functionalities. Thus far, the studies of chiral phonons across diverse materials platforms have evolved largely independently within these fields, but the experimental techniques are often interrelated. In this perspective, we present a detailed description, as well as advantages and disadvantages of the current approaches for experimentally measuring chiral phonons in chiral and achiral materials. We conclude with a discussion of new methods for measuring chiral phonons. Ultimately, this work seeks to offer an experimental guide for systematically investigating the properties of chiral phonons in various materials systems and applications.

cond-mat.mtrl-sci

A model of grain growth in UN integrating molecular dynamics, phase-field modeling, and uncertainty quantification

Grain growth kinetics and grain-boundary (GB) properties in uranium mononitride (UN) are investigated through an integrated multiscale framework combining molecular dynamics (MD), phase-field modeling, and surrogate-assisted uncertainty quantification. MD simulations yield GB energies for 27 symmetric tilt boundaries from 0--2000~K, which are consistent with available DFT values. The average GB energy is nearly temperature-independent below 1000~K and increases at higher temperatures. A mechanistic pore-drag model applied to the only available grain growth dataset for actinide nitrides yields a mobility reduction factor of $s \approx 0.93$--$0.99$, statistically indistinguishable from unity, confirming that pore drag is negligible under the experimental conditions. The intrinsic GB mobility is therefore extracted directly from the effective mobility, yielding $M_0 = 2.05\times10^{-15}$~m$^4$/(J$\cdot$s) and $Q_M = 0.89$~eV. Phase-field simulations conducted from 1500--2000~K confirm normal curvature-driven grain growth, with grain size distributions converging to the Hillert-like form. A surrogate-assisted global sensitivity analysis---combining principal component analysis, Gaussian process regression, and Sobol decomposition---reveals that the mobility prefactor $M_0$ dominates output variance at all times, followed by the activation energy $Q_M$, while the GB energy $\gamma$ contributes minimally. These results establish the first quantitative grain growth framework for UN and identify the reduction of uncertainty in $M_0$ and $Q_M$ as the highest-priority target for future experimental efforts.

cond-mat.mtrl-sci

Silicon Solar Cell Design for >30% Efficiency via Singlet Fission

Singlet fission (SF) materials convert high-energy photons into multiple charge carriers, providing a route to exceed the efficiency limits of single-junction silicon solar cells without many of the complexities of multi-junction tandem designs. Following the first demonstration of an SF-enhanced silicon solar cell in 2025, there is a need to understand how SF materials can be effectively integrated into high-efficiency industrial silicon devices and translated from proof of concept to a manufacturable technology. Using coupled optical and electrical simulations, we assess the efficiency potential of several industrially relevant silicon cell architectures combined with SF materials. Interdigitated back-contact (IBC) cells offer the greatest potential for improvement due to unrestricted front-surface access and can achieve efficiencies exceeding 33%. However, performance is highly sensitive to front-surface passivation quality. Appropriate silicon design, particularly controlled surface doping and fixed interfacial charge, can mitigate recombination losses and relax passivation requirements for ultra-thin exciton-transfer layers.

cond-mat.mtrl-sci