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arXiv · 2506.21159

Electrical Characterization of hexagonal SiGe

Isabelle Bollier·Federico Balduini·Marilyne Sousa·Marco Vettori·Wouter H. J. Peeters·Erik P. A. M. Bakkers·Heinz Schmid
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Abstract

We report electrical measurements on hexagonal silicon-germanium (hex-SiGe), a group IV alloy with direct bandgap. Electrical contacts are formed by metal alloying and doping is achieved using ion implantation. The metastable hex-SiGe phase is successfully recovered after implantation by solid phase recrystallization. Independent of the metal used, contacts on n-type resulted in Schottky barriers due to Fermi level pinning of hex-SiGe. Overall, this constitutes a first step towards use of hex-SiGe for optoelectronic applications.

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Isabelle Bollier, Federico Balduini, Marilyne Sousa, Marco Vettori, Wouter H. J. Peeters, Erik P. A. M. Bakkers, Heinz Schmid. 2025-06-26. Electrical Characterization of hexagonal SiGe. https://arxiv.org/abs/2506.21159

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