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arXiv · 2507.03985

Ferroelectrically Switchable Half-Quantized Hall Effect

M. U. Muzaffar·Kai-Zhi Bai·Wei Qin·Guohua Cao·Bo Fu·Ping Cui·Shun-Qing Shen·Zhenyu Zhang
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Abstract

Integrating ferroelectricity, antiferromagnetism, and topological quantum transport within a single material is rare, but crucial for developing next-generation quantum devices. Here, we propose a multiferroic heterostructure consisting of an antiferromagnetic MnBi$_2$Te$_4$ bilayer and an Sb$_2$Te$_3$ film is able to harbor the half-quantized Hall (HQH) effect with a ferroelectrically switchable Hall conductivity of $e^2/2h$. We first show that, in the energetically stable configuration, the antiferromagnetic MnBi$_2$Te$_4$ bilayer opens a gap in the top surface bands of Sb$_2$Te$_3$ through proximity effect, while its bottom surface bands remain gapless; consequently, HQH conductivity of $e^2/2h$ can be sustained clockwise or counterclockwise depending on antiferromagnetic configuration of the MnBi$_2$Te$_4$. Remarkably, when applying interlayer sliding within the MnBi$_2$Te$_4$ bilayer, its electric polarization direction associated with parity-time reversal symmetry breaking is reversed, accompanied by a reversal of the HQH conductivity. The proposed approach offers a powerful route to control topological quantum transport in antiferromagnetic materials by ferroelectricity.

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M. U. Muzaffar, Kai-Zhi Bai, Wei Qin, Guohua Cao, Bo Fu, Ping Cui, Shun-Qing Shen, Zhenyu Zhang. 2025-07-05. Ferroelectrically Switchable Half-Quantized Hall Effect. https://doi.org/10.1021/acs.nanolett.5c00550

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