Model of dark current in silicon-based barrier impurity band infrared detector devices

Mengyang Cui

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arXiv · 2507.14923

Model of dark current in silicon-based barrier impurity band infrared detector devices

Mengyang Cui

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Abstract

Dark current in silicon-based blocked impurity band (BIB) infrared detectors has long been a critical limitation on device performance. This work proposes a chiral-phonon-assisted spin current model at interfaces to explain the parabolic-like dark current behavior observed at low bias voltages. Concurrently, the spatially-confined charge transport theory is employed to elucidate the dark current generation mechanism across the entire operational voltage range.

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Mengyang Cui. 2025-07-20. Model of dark current in silicon-based barrier impurity band infrared detector devices. https://arxiv.org/abs/2507.14923

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