Frequency comb generation in low-loss, low-stress, high-Q deuterated silicon nitride microring resonators in an 8-inch photonics platform

Y. Cao; G. F. Chen; C. Lau; L. Y. M. Tobing; S. L. H. Jang; Y. F. Tsang; J. O. Yoo; Y. T. Toh; J. S. Goh; L. W. Lim; C. W. Wong; D. K. T. Ng; D. T. H. Tan; X. Luo

arXiv · 2507.17287

Frequency comb generation in low-loss, low-stress, high-Q deuterated silicon nitride microring resonators in an 8-inch photonics platform

Y. Cao·G. F. Chen·C. Lau·L. Y. M. Tobing·S. L. H. Jang·Y. F. Tsang·J. O. Yoo·Y. T. Toh·J. S. Goh·L. W. Lim·C. W. Wong·D. K. T. Ng·D. T. H. Tan·X. Luo

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Abstract

Systematic studies on different SiN films in terms of propagation losses are presented, and deuterated SiN emerges as a good candidate for ultralow loss (< 0.1 dB/cm) and reliability by simple 8-inch process with low thermal budget. Frequency comb generation in high-Q (~1 million) deuterated silicon nitride microring is demonstrated and used for intensity modulated direct detection transmission. Negligible power penalty for 25.78 GBaud/s NRZ and PAM4 is achieved at error rates <10-6, below the FEC limit.

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Y. Cao, G. F. Chen, C. Lau, L. Y. M. Tobing, S. L. H. Jang, Y. F. Tsang, J. O. Yoo, Y. T. Toh, J. S. Goh, L. W. Lim, C. W. Wong, D. K. T. Ng, D. T. H. Tan, X. Luo. 2025-07-23. Frequency comb generation in low-loss, low-stress, high-Q deuterated silicon nitride microring resonators in an 8-inch photonics platform. https://arxiv.org/abs/2507.17287

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