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arXiv · 2507.20690

Sliding Engineering Spin-Valley-Layer Coupling and Altermagnetism in Bilayer Antiferromagnetic Honeycomb Lattices

Wen-Xin Jiang·Zhen-Hao Gong·Yuantao Chen·Zhigang Gui·Li Huang
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Abstract

Valley polarization and altermagnetism are two emerging fundamental phenomena in condensed matter physics, offering unprecedented opportunites for information encoding and processing in novel energy-efficient devices. By coupling valley and spin degrees of freedom with ferroic orders such as ferroelectricity, nonvolatile memory functionalities can be achieved. Here, we propose a way to realize ferroelectric-valley (FE-valley) and FE-altermagnetic coupling in a bilayer antiferromagnetic (AFM) honeycomb lattices based on an effective four-band spin-full $k\cdot p$ model. Our proposal is validated in bilayer MnPTe$_3$ through first-principles calculations. A spontaneous out-of-plane electric polarization occurs in AB- (BA-) stacking configuration, which is reversibly switchable via interlayer sliding. Remarkably, polarization reversal simultaneously inverts both layer-resolved valley polarization and altermagnetic spin splitting. This dual control enables tunable layer-spin-locked anomalous valley Hall effects and an unprecedented magnetoelectric response in 2D antiferromagnets. Our work establishes a general paradigm for electrically programmable valleytronic and spintronic functionalities of 2D AFM materials.

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Wen-Xin Jiang, Zhen-Hao Gong, Yuantao Chen, Zhigang Gui, Li Huang. 2025-07-28. Sliding Engineering Spin-Valley-Layer Coupling and Altermagnetism in Bilayer Antiferromagnetic Honeycomb Lattices. https://arxiv.org/abs/2507.20690

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