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arXiv · 2508.01214

Magnetism at the interface of $MoSe_2/V_2O_5$ heterostructures

Rohin Sharma·Diem Thi-Xuan Dang·Lilia M. Woods
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Abstract

Magnetism in doped transition metal dichalcogenide monolayers and van der Waals interfaced materials have motivated the search for sustainable magnetic states at the nanoscale with the prospect of building devices for spintronics applications. In this study, we report the existence of magnetism in a heterostructure made up of an $MoSe_2$ transition metal dichalcogenide monolayer and a $V_2O_5$ substrate. Using density functional theory simulations, we find that ferromagnetic ordering can be found in the $MoSe_2/V_2O_5$ heterostructure even though the individual components are nonmagnetic. By examining the electronic structure and magnetic properties of this system we find how the occurring ferromagnetism evolves if the transition metal dichalcogenide or the $V_2O_5$ substrate can host point defects. Our study suggests that the balance between charge transfer and spin reorganization can lead to interface magnetism in novel hybrid materials.

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Rohin Sharma, Diem Thi-Xuan Dang, Lilia M. Woods. 2025-08-02. Magnetism at the interface of $MoSe_2/V_2O_5$ heterostructures. https://arxiv.org/abs/2508.01214

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