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arXiv · 2508.07352

High-efficiency silicon LED with ultra-wideband emission from visible to infrared at room temperature

Xiaobo Li·Jiajing He·Yaping Dan·Jun Wang
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Abstract

The primary challenge in silicon photonics is achieving efficient luminescence in the communication band, crucial for its large-scale application. Despite significant efforts, silicon light sources still suffer from low efficiency and limited emission wavelengths. We addressed this by achieving broadband luminescence from 600-1650 nm through femtosecond laser annealing of 220nm standard SOI, resulting in an external quantum efficiency exceeding 0.26% and an output optical power density greater than 20 W/cm2, several orders of magnitude higher than other silicon-based LEDs in performance. The broadband LED has potential applications in optical inspection, gas sensing, optical coherence tomography, optical communication, and more.

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Xiaobo Li, Jiajing He, Yaping Dan, Jun Wang. 2025-08-10. High-efficiency silicon LED with ultra-wideband emission from visible to infrared at room temperature. https://arxiv.org/abs/2508.07352

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