SearcharxivSearch

arXiv · 2509.01262

Integrated photonic neuromorphic computing: device, architecture, chip, algorithm

Abstract

Artificial intelligence (AI) has experienced explosive growth in recent years. The large models have been widely applied in various fields, including natural language processing, image generation, and complex decision-making systems, revolutionizing technological paradigms across multiple industries. Nevertheless, the substantial data processing demands during model training and inference result in the computing power bottleneck. Traditional electronic chips based on the von Neumann architecture struggle to meet the growing demands for computing power and power efficiency amid the continuous development of AI. Photonic neuromorphic computing, an emerging solution in the post-Moore era, exhibits significant development potential. Leveraging the high-speed and large-bandwidth characteristics of photons in signal transmission, as well as the low-power consumption advantages of optical devices, photonic integrated computing chips have the potential to overcome the memory wall and power wall issues of electronic chips. In recent years, remarkable advancements have been made in photonic neuromorphic computing. This article presents a systematic review of the latest research achievements. It focuses on fundamental principles and novel neuromorphic photonic devices, such as photonic neurons and photonic synapses. Additionally, it comprehensively summarizes the network architectures and photonic integrated neuromorphic chips, as well as the optimization algorithms of photonic neural networks. In addition, combining with the current status and challenges of this field, this article conducts an in-depth discussion on the future development trends of photonic neuromorphic computing in the directions of device integration, algorithm collaborative optimization, and application scenario expansion, providing a reference for subsequent research in the field of photonic neuromorphic computing.

Explore related subjects

Keep this discovery

BibTeXRIS

Shuiying Xiang, Chengyang Yu, Yizhi Wang, Xintao Zeng, Yuna Zhang, Dianzhuang Zheng, Xinran Niu, Haowen Zhao, Hanxu Zhou, Yanan Han, Xingxing Guo, Yahui Zhang, Yue Hao. 2025-09-01. Integrated photonic neuromorphic computing: device, architecture, chip, algorithm. https://arxiv.org/abs/2509.01262

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

Two-step high-accuracy microwave frequency measurement and time-frequency analysis based on optical frequency combs

Broadband microwave frequency measurement and time-frequency analysis are crucial for applications such as electronic warfare. However, when it comes to ultra wideband signal analysis, traditional electronic methods have high analysis accuracy, but intrinsic electronic bottlenecks limit their real-time analysis. Here, we propose and experimentally demonstrate a two-step microwave frequency measurement and time-frequency analysis method based on optical frequency combs. The system first performs coarse frequency localization over the 0-40 GHz range using stimulated-Brillouin-scattering-assisted frequency-to-time mapping (FTTM) and dual-comb channelized reception. The dual-comb is then reapplied for downconverting the signal under test, followed by digital signal processing to achieve high-accuracy unambiguous frequency extraction. Experimental results show that the system achieves mean single-tone frequency measurement errors of less than 10 kHz over 0-40 GHz. We further experimentally measure multi-tone, linearly frequency-modulated, and V-shaped frequency-modulated signals, demonstrating the proposed method's capability for analyzing complex signals.

physics.optics

A Two-Mirror Faceted Projection System for EUV Lithography

We propose an all-reflective two-mirror projection system for extreme ultraviolet (EUV) lithography operating at exposure wavelengths of $13.5$~nm (Mo/Si) and $11.2$~nm (Ru/Be), delivering a fourfold ($4\times$) demagnification of the periodic mask pattern at a numerical aperture approaching unity ($\mathrm{NA}_{\max} \approx 0.993$). In contrast to conventional EUV projection objectives that incorporate 6--10 aspheric mirrors with an overall optical throughput of less than $15\%$, the proposed design redirects each accepted discrete spatial diffraction order scattered by the mask onto the wafer via a dedicated pair of planar mirror facets. The number of reflections is strictly fixed at two for all accepted orders, retaining $50$--$60\%$ of the power leaving the mask in each accepted order. We derive a spatial geometry providing rigorous optical path length equalization across all diffraction orders, thereby removing order-dependent propagation phase shifts. Individually optimized 30-bilayer Bragg multilayer coatings are designed for each facet using the transfer matrix method combined with global evolutionary optimization algorithms. The architecture is generalized to a three-dimensional vector formulation with a two-dimensionally periodic mask. Utilizing inverse lithography technology, Fourier parameterization, and a differentiable electromagnetic modal waveguide solver, we solve the synthesis problem for binary absorber masks (La absorber on a Ru/Be/Sr multilayer mirror). We demonstrate simulated aerial images of sub-10-nm features on the wafer (isolated peaks with a full width at half maximum (FWHM) of approximately $5.4$~nm and line pairs with a critical dimension of $6$~nm) and find that the two peaks remain resolved for the tested wafer defocus values from $0$ to $5$~nm along the $z$-axis.

physics.optics

Antimony for broadband nanophotonics across the ultraviolet, visible and infrared

Semimetal elemental antimony (Sb) nanostructures show great potential for applications where nanophotonic properties play a key role, such as phase-change optical memories, non-linear optical elements, photothermal therapy agents, photodetectors and photocatalysts. However, designing advanced Sb-based photonic devices critically requires an accurate and reliable knowledge of the optical response of bulk and nanoscale Sb. Herein, we report for the first time a fully consistent and accurately measured dielectric function for Sb nanoscale films in a wide spectral range from the ultraviolet to the far infrared (4 - 0.04 eV, i.e. ~ 0.3 - 30 $\mu$m), surpassing previous reports that explored a limited spectral range. It is found that the Sb spectral response is driven exclusively by giant interband transitions in the visible up to mid infrared (4 - 0.4 eV, i.e. ~ 0.3 - 3 $\mu$m), and that their contribution dominates over that of free carriers down to 0.12 eV (i.e. ~ 10 $\mu$m). Such spectral response enables Sb nanostructures to display spectrally selective and tunable nanophotonic resonances. First, we showcase interband plasmonic resonances in the visible-to-near infrared for Sb nanogratings. Second, we report giant refractive index dielectric resonances in the mid infrared for nanostructured Sb/dielectric/metal resonant cavities. These findings open a pathway to optimized planar Sb nanoscale designs enabling a tailored light-matter interaction, which will be useful for integrated data, telecom, medical, optoelectronic and energy conversion devices operating in a broad spectral range.

physics.optics