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arXiv · 2509.07440

Ions leaving no tracks

Azat Abdullaev·Javier Garcia Fernandez·Chloe Nozais·Jacques O'Connell·Rustem Tlegenov·Kairolla Sekerbayev·Alexander Azarov·Aleksi Leino·Tomas Fernandez Bouvier·Junlei Zhao·Aldo Artimez Pena·Nikita Medvedev·Zhandos Utegulov·Oystein Prytz·Flyura Djurabekova·Andrej Kuznetsov
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Abstract

The paths of swift heavy ions are typically traceable in solids, because of confined electronic interactions along the paths, inducing what is known in literature as 'ion tracks', i.e. nano-sized in cross-section cylindrical zones of modified material extending for microns in length. Such tracks readily form in materials exhibiting low thermal conductivities, in particular insulators or semiconductors, altering the homogeneity of materials. In this work, using recently discovered gamma/beta-Ga2O3 polymorph heterostructures we show that, in contrast to the trends in many other materials, including that in beta-Ga2O3, swift heavy ions leave no tracks in gamma-Ga2O3. We explained this trend in terms of amazingly fast disorder recovery, occurring because of multiple configurations in the gamma-Ga2O3 lattice itself, so that the disorder formed by ion impacts gets rapidly erased, giving a perception of ions leaving no tracks. As such, gamma-Ga2O3, readily integrated with beta-Ga2O3 in polymorph heterostructures, may become a promising semiconductor platform for devices capable to operate in extremely harsh radiation environments.

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Azat Abdullaev, Javier Garcia Fernandez, Chloe Nozais, Jacques O'Connell, Rustem Tlegenov, Kairolla Sekerbayev, Alexander Azarov, Aleksi Leino, Tomas Fernandez Bouvier, Junlei Zhao, Aldo Artimez Pena, Nikita Medvedev, Zhandos Utegulov, Oystein Prytz, Flyura Djurabekova, Andrej Kuznetsov. 2025-09-09. Ions leaving no tracks. https://arxiv.org/abs/2509.07440

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