SearcharxivSearch

arXiv · 2509.12940

Recent Advancements in the Development of Two-dimensional Transition Metal Dichalcogenides (TMDs) and their potential application

Abstract

This article explores the recent advancements in atomically thin two-dimensional transition metal dichalcogenides (2D TMDs) and their potential applications in various fields, including nanoelectronics, photonics, sensing, energy storage, and optoelectronics. Specifically, the focus is on TMDs such as MoS2, WS2, MoSe2, and WSe2, promising for next-generation electronics and optoelectronics devices based on ultra-thin atomic layers. One of the main challenges in utilising TMDs for practical applications is the scalable production of defect-free materials on desired substrates. However, innovative growth strategies have been developed to address this issue and meet the growing demand for high-quality and controllable TMD materials. These strategies are compatible with conventional and unconventional substrates, opening up new possibilities for practical implementation. Furthermore, the article highlights the development of novel 2D TMDs with unique functionalities and remarkable chemistry. These advancements contribute to expanding the range of applications and capabilities of TMD materials, pushing the boundaries of what can be achieved with these ultra-thin layers. In addition to electronics, the article delves into the significant efforts dedicated to exploring the potential of 2D TMDs in energy and sensor applications. These materials have shown promising characteristics for energy storage and have been extensively studied for their sensing capabilities, showcasing their versatility and potential impact in these fields. This article provides a comprehensive overview of the recent progress in 2D TMDs, emphasising their applications in electronics, optoelectronics, energy, and sensing. The continuous research and development in this area is promising for advancing these materials and their integration into practical devices and systems.

Explore related subjects

Keep this discovery

BibTeXRIS

Mitesh B. Solanki, Margi Jani. 2025-09-16. Recent Advancements in the Development of Two-dimensional Transition Metal Dichalcogenides (TMDs) and their potential application. https://arxiv.org/abs/2509.12940

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

Measuring chiral phonons

Chiral phonons are quantized vibrations where the atomic motion in a solid breaks improper rotation symmetries. In many cases, chiral phonons possess angular momenta and are therefore selective to circularly polarized light. Both fundamental and applied research efforts on chiral phonons have been gaining increasing attention owing to their importance in a variety of fields including spintronics, spin-selective chemical reactions, thermal transport, quantum information processing and biosensing, where the bi-directional spin-lattice coupling enabled by chiral phonons can be harnessed in new ways, and potentially lead to new functionalities. Thus far, the studies of chiral phonons across diverse materials platforms have evolved largely independently within these fields, but the experimental techniques are often interrelated. In this perspective, we present a detailed description, as well as advantages and disadvantages of the current approaches for experimentally measuring chiral phonons in chiral and achiral materials. We conclude with a discussion of new methods for measuring chiral phonons. Ultimately, this work seeks to offer an experimental guide for systematically investigating the properties of chiral phonons in various materials systems and applications.

cond-mat.mtrl-sci

A model of grain growth in UN integrating molecular dynamics, phase-field modeling, and uncertainty quantification

Grain growth kinetics and grain-boundary (GB) properties in uranium mononitride (UN) are investigated through an integrated multiscale framework combining molecular dynamics (MD), phase-field modeling, and surrogate-assisted uncertainty quantification. MD simulations yield GB energies for 27 symmetric tilt boundaries from 0--2000~K, which are consistent with available DFT values. The average GB energy is nearly temperature-independent below 1000~K and increases at higher temperatures. A mechanistic pore-drag model applied to the only available grain growth dataset for actinide nitrides yields a mobility reduction factor of $s \approx 0.93$--$0.99$, statistically indistinguishable from unity, confirming that pore drag is negligible under the experimental conditions. The intrinsic GB mobility is therefore extracted directly from the effective mobility, yielding $M_0 = 2.05\times10^{-15}$~m$^4$/(J$\cdot$s) and $Q_M = 0.89$~eV. Phase-field simulations conducted from 1500--2000~K confirm normal curvature-driven grain growth, with grain size distributions converging to the Hillert-like form. A surrogate-assisted global sensitivity analysis---combining principal component analysis, Gaussian process regression, and Sobol decomposition---reveals that the mobility prefactor $M_0$ dominates output variance at all times, followed by the activation energy $Q_M$, while the GB energy $\gamma$ contributes minimally. These results establish the first quantitative grain growth framework for UN and identify the reduction of uncertainty in $M_0$ and $Q_M$ as the highest-priority target for future experimental efforts.

cond-mat.mtrl-sci

Silicon Solar Cell Design for >30% Efficiency via Singlet Fission

Singlet fission (SF) materials convert high-energy photons into multiple charge carriers, providing a route to exceed the efficiency limits of single-junction silicon solar cells without many of the complexities of multi-junction tandem designs. Following the first demonstration of an SF-enhanced silicon solar cell in 2025, there is a need to understand how SF materials can be effectively integrated into high-efficiency industrial silicon devices and translated from proof of concept to a manufacturable technology. Using coupled optical and electrical simulations, we assess the efficiency potential of several industrially relevant silicon cell architectures combined with SF materials. Interdigitated back-contact (IBC) cells offer the greatest potential for improvement due to unrestricted front-surface access and can achieve efficiencies exceeding 33%. However, performance is highly sensitive to front-surface passivation quality. Appropriate silicon design, particularly controlled surface doping and fixed interfacial charge, can mitigate recombination losses and relax passivation requirements for ultra-thin exciton-transfer layers.

cond-mat.mtrl-sci