Effective conduction-band model for zincblende III-V semiconductors in the presence of strain: tuning the properties of bulk crystals and nanostructures

Abstract

Strain provides a powerful knob to tailor the electronic properties of semiconductors. Simple yet accurate approximations that capture strain effects in demanding simulations of mesoscopic nanostructures are therefore highly desirable. However, for III-V compounds, key materials for quantum applications, such approaches remain comparatively underdeveloped. In this work, we derive a compact, effective Hamiltonian that describes the conduction band of zincblende III-V semiconductors incorporating strain effects. Starting from the eight-band k$\cdot$p model with Bir-Pikus corrections, we perform a folding-down procedure to obtain analytical expressions for conduction-band strain-renormalized parameters, including the effective mass, chemical potential, spin-orbit coupling, and $g$-factor. The model reproduces full multiband results under small to moderate strain, while retaining a form suitable for device-scale calculations. We benchmark the model for bulk deformations and apply it to representative nanostructures, such as core.shell nanowires and planar heterostructures. Our results provide a practical and versatile tool for incorporating strain into the design of III-V semiconductor devices, enabling reliable predictions of their properties with direct implications for spintronic, straintronic, optoelectronic, and topological quantum technologies.