Atomic-Scale Insights into the Switching Mechanisms of RRAM Devices

Abstract

The growing energy demands of information and communication technologies, driven by data-intensive computing and the von Neumann bottleneck, underscore the need for energy-efficient alternatives. Resistive random-access memory (RRAM) devices have emerged as promising candidates for beyond von Neumann computing paradigms, such as neuromorphic computing, offering voltage-history-dependent switching that mimics synaptic and neural behaviors. Atomic-scale mechanisms, such as defect-driven filament formation and ionic transport, govern these switching processes. In this work, we present a comprehensive characterization of Tantalum Oxide based RRAM devices featuring both oxygen-rich and oxygen-deficient switching layers. We analyze the dominant conduction mechanisms underpinning resistive switching and systematically evaluate how oxygen stoichiometry influences device behavior. Leveraging a bottom-up design methodology, we link material composition to electrical performance metrics-such as endurance, cycle-to-cycle variability, and multilevel resistance states-providing actionable guidelines for optimizing RRAM architectures for energy-efficient memory and computing applications.