Resistive switching behaviors in vertically aligned MoS$_2$ films with Cu, Ag, and Au electrodes

Shuei-De Huang; Touko Lehenkari; Topias Järvinen; Seyed Hossein Hosseini-Shokouh; Farzaneh Bouzari; Krisztian Kordas; Hannu-Pekka Komsa

arXiv · 2509.20061

Resistive switching behaviors in vertically aligned MoS$_2$ films with Cu, Ag, and Au electrodes

Shuei-De Huang·Touko Lehenkari·Topias Järvinen·Seyed Hossein Hosseini-Shokouh·Farzaneh Bouzari·Krisztian Kordas·Hannu-Pekka Komsa

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Abstract

Neuromorphic computing circuits can be realized using memristors based on low-dimensional materials enabling enhanced metal diffusion for resistive switching. Here, we investigate memristive properties of vertically aligned MoS$_2$ (VA-MoS$_2$) films with three different metal electrodes: Ag, Cu, and Au. Despite having the same active material, all three metals show distinct switching behavior, which are crucial for neuromorphic computing applications: Ag enables volatile switching, Cu demonstrates stable non-volatile switching with retention over 2500 s, and Au shows no memristive response. Cu devices show abrupt resistance changes, and significant increase of copper content upon biasing, indicative of stable non-volatile switching based on filament formation and rupture. About 85% of Ag and Cu devices exhibit reliable memristor behavior. Our findings provide valuable insights into the memristive switching mechanism in VA-MoS$_2$ and present a promising avenue for facile fabrication of neuromorphic circuits by employing a set of different metals on a single active material.

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Shuei-De Huang, Touko Lehenkari, Topias Järvinen, Seyed Hossein Hosseini-Shokouh, Farzaneh Bouzari, Krisztian Kordas, Hannu-Pekka Komsa. 2025-09-24. Resistive switching behaviors in vertically aligned MoS$_2$ films with Cu, Ag, and Au electrodes. https://arxiv.org/abs/2509.20061

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