Sliding multiferroicity in hexagonal stacked CrI3

Abstract

Developing new multiferroics at the two-dimensional (2D) limit with energy-efficient magnetoelectric coupling can inform the interplay physics of novel orders and advance on-chip high-performance computing applications. Here we apply stacking order engineering to create a new type of 2D multiferroics, namely sliding multiferroics, based on polar hexagonal stacked (H-stacked) CrI3. This new stacking order removes structural inversion symmetry and gives rise to room temperature sliding ferroelectricity, as confirmed by Raman spectroscopy, second harmonic generation spectroscopy and electrical transport measurements. Building upon the gate-dependent reflective magnetic circular dichroism, first-principles calculations, and modeling, sliding ferroelectricity is shown to interplay with an emergent interfacial ferromagnetism via interlayer spin-polarized charge transfer. This coupling mechanism results in non-volatile magnetic switching by as low as 0.4V across the H-stacked CrI3. Our demonstration introduces polar stacking order engineering of 2D magnets as a general approach to create non-volatile 2D multiferroics with efficient magnetoelectric coupling, paving the way for low-power electronics and spintronics at the atomically thin limit.