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arXiv · 2510.07421

Bayesian Optimization of Multi-Bit Pulse Encoding in In2O3/Al2O3 Thin-film Transistors for Temporal Data Processing

Abstract

Utilizing the intrinsic history-dependence and nonlinearity of hardware, physical reservoir computing is a promising neuromorphic approach to encode time-series data for in-sensor computing. The accuracy of this encoding critically depends on the distinguishability of multi-state outputs, which is often limited by suboptimal and empirically chosen reservoir operation conditions. In this work, we demonstrate a machine learning approach, Bayesian optimization, to improve the encoding fidelity of solution-processed Al2O3/In2O3 thin-film transistors (TFTs). We show high-fidelity 6-bit temporal encoding by exploring five key pulse parameters and using the normalized degree of separation (nDoS) as the metric of output state separability. Additionally, we show that a model trained on simpler 4-bit data can effectively guide optimization of more complex 6-bit encoding tasks, reducing experimental cost. Specifically, for the encoding and reconstruction of binary-patterned images of a moving car across 6 sequential frames, we demonstrate that the encoding is more accurate when operating the TFT using optimized pulse parameters and the 4-bit optimized operating condition performs almost as well as the 6-bit optimized condition. Finally, interpretability analysis via Shapley Additive Explanations (SHAP) reveals that gate pulse amplitude and drain voltage are the most influential parameters in achieving higher state separation. This work presents the first systematic method to identify optimal operating conditions for reservoir devices, and the approach can be extended to other physical reservoir implementations across different material platforms.

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BibTeXRIS

Javier Meza-Arroyo, Benius Dunn, Weijie Xu, Yu-Chieh Chen, Jen-Sue Chen, Julia W. P. Hsu. 2025-10-08. Bayesian Optimization of Multi-Bit Pulse Encoding in In2O3/Al2O3 Thin-film Transistors for Temporal Data Processing. https://doi.org/10.1038/s44335-025-00051-3

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