Ferroelectric amplitude switching and continuous memory

Gye-Hyeon Kim; Tae Hyun Jung; Seungjoon Sun; Jung Kyu Lee; Jaewoo Han; P. Karuna Kumari; Jin-Hyun Choi; Hansol Lee; Tae Heon Kim; Yoon Seok Oh; Seung Chul Chae; Se Young Park; Sang Mo Yang; Changhee Sohn

arXiv · 2510.14491

Ferroelectric amplitude switching and continuous memory

Gye-Hyeon Kim·Tae Hyun Jung·Seungjoon Sun·Jung Kyu Lee·Jaewoo Han·P. Karuna Kumari·Jin-Hyun Choi·Hansol Lee·Tae Heon Kim·Yoon Seok Oh·Seung Chul Chae·Se Young Park·Sang Mo Yang·Changhee Sohn

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Abstract

Although ferroelectric systems inherently exhibit binary switching behavior, recent advances in analog memory device have spurred growing interest in achieving continuous memory states. In this work, we demonstrate ferroelectric amplitude switching at the mesoscopic scale in compositionally graded Ba1-xSrxTiO3 heterostructures, enabling continuous modulation of polarization magnitude without altering its direction, which we defined as amplitude switching. Using switching current measurement, piezoresponse force microscopy and Landau-Ginzburg-Devonshire simulations, we reveal that compositionally graded ferroelectric heterostructure can possess amplitude switching behavior through a double well potential with flattened minima. This behavior supports stable, continuous polarization states and establishes a new platform for analog memory applications. These findings introduce amplitude switching as a new dynamic of the order parameter, paving the way for energy-efficient and reliable analog memory systems.

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Gye-Hyeon Kim, Tae Hyun Jung, Seungjoon Sun, Jung Kyu Lee, Jaewoo Han, P. Karuna Kumari, Jin-Hyun Choi, Hansol Lee, Tae Heon Kim, Yoon Seok Oh, Seung Chul Chae, Se Young Park, Sang Mo Yang, Changhee Sohn. 2025-10-16. Ferroelectric amplitude switching and continuous memory. https://arxiv.org/abs/2510.14491

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