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arXiv · 2510.14554

Contrasting properties of free carriers in $n$- and $p$-type Sb$_2$Se$_3$

F. Herklotz·E. V. Lavrov·T. D. C. Hobson·T. P. Shalvey·J. D. Major·K. Durose
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Abstract

We report persistent photoconductivity in $p$-type Sb$_2$Se$_3$ single crystals doped with Cd or Zn, where enhanced conductivity remains for hours after illumination ceases at temperatures below $\sim$25~K. Comparative transport and infrared absorption measurements, including on $n$-type Cl-doped counterparts, reveal strong indications that hole transport in Sb$_2$Se$_3$ is more strongly affected by intrinsic carrier scattering than electron transport. These results point to a fundamental asymmetry in charge carrier dynamics and highlight the potential role of polaronic effects in limiting hole mobility in this quasi-one-dimensional semiconductor.

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F. Herklotz, E. V. Lavrov, T. D. C. Hobson, T. P. Shalvey, J. D. Major, K. Durose. 2025-10-16. Contrasting properties of free carriers in $n$- and $p$-type Sb$_2$Se$_3$. https://arxiv.org/abs/2510.14554

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