Defect Engineered Hexagonal-Boron Nitride Enables Ionic Conduction for Lithium Metal Batteries

Abstract

The practical implementation of lithium-metal anodes has been hindered by uncontrollable dendrite formation and interfacial instability. This study presents a defect-engineering approach of a chemically stable and electrically insulating interfacial layer of hexagonal boron nitride (h-BN) that markedly enhances ionic conductivity through argon ion irradiation. Initially, the electrochemical performance from commercially available, large-area chemical vapor deposition (CVD)-grown h-BN films with industrial-scale argon ion implantation motivated our subsequent detailed investigations using lab-scale exfoliated single-crystal h-BN flakes. Integration of these exfoliated flakes into a hybrid microfluidic-microelectronic chip provided direct evidence that controlled vacancy defects transform h-BN into an efficient lithium-ion conductor while preserving its intrinsic electrical insulation. Experimental validation confirmed improved lithium-metal anode stability, achieving dendrite-free cycling with Li plating/stripping Coulombic efficiencies exceeding 99.5% about 1000 cycles. Further assemble of irradiated h-BN in lithium-sulfur batteries effectively mitigates the polysulfide shuttle effect, sustaining over 97% specific capacity around 300 cycles. These results establish a robust, scalable interface-engineering route for next-generation lithium-metal batteries that combine high ionic transport with excellent electrical insulation.