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arXiv · 2511.07992

High and Magnetic-field-dependent Surface Carriers Mobility in 3D Topological Insulators without Bulk States

M. V. Pugachev·A. E. Borisov·A. V. Shupletsov·V. O. Sakhin·E. F. Kukovitsky·A. Yu. Kuntsevich
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Abstract

By applying the conventional two-liquid model to the magnetoresistivity tensor, we reveal a record-high carrier mobility for surface states in tetradymite topological insulators ($\sim$ 20000 cm$^2$/Vs) in both bulk crystals and thin flakes of Sn-Bi$_{1.1}$Sb$_{0.9}$Te$_2$S. Bulk crystals of this 3D topological insulator exhibit a transition from bulk to surface-dominated conductivity below 100 K, whereas in thin flakes, bulk conductivity is suppressed at even higher temperatures. Our data therefore suggest that a key ingredient for elevated mobility is the absence of bulk carriers at the Fermi level. A fingerprint of the high-mobility carriers, i.e a steep low-field magnetoresistance along with a strong Hall effect nonlinearity below 1 T, signifies the presence of at least two surface-related carrier species, even when bulk states are frozen out. To explain the magnetoresistance and the Hall effect in a wider range of magnetic fields ($>1$ T), one must assume that the carrier mobility drops with the field. The influence of Zeeman splitting on mobility and the contribution of anomalous Hall conductivity provide a much better description of the magnetoresistance and the nonlinearity of the Hall coefficient. Our data call for a revision of the surface state mobility in 3D topological insulators.

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M. V. Pugachev, A. E. Borisov, A. V. Shupletsov, V. O. Sakhin, E. F. Kukovitsky, A. Yu. Kuntsevich. 2025-11-11. High and Magnetic-field-dependent Surface Carriers Mobility in 3D Topological Insulators without Bulk States. https://doi.org/10.1063/5.0297373

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