SearcharxivSearch

arXiv · 2512.01084

Aging-driven in situ polymerization of FEC additive boosts the calendar-life of silicon anodes via surface passivation enhancement

Abstract

The role of additives such as FEC in extending the calendar life of silicon anodes beyond the cycling benefits is still not fully understood. Herein, the calendar life of high-loading Si (80 wt%) using baseline 1.2 M LiPF6 in EC-EMC electrolyte versus adding 10 wt% FEC is investigated over months. Over 8 days of aging, FEC leads to a 13-fold reduction in irreversible capacity loss in Si-LiFePO4 full cells. Cells without FEC are projected to fall below 80% of their initial capacity within approx. 22 days versus approx. 279 days with FEC. Symmetric Si-Si cells from harvested electrodes show greater increase in interphase resistance without FEC, whereby an increase of 10.81 Ohms is measured for 0 wt% FEC vs. only 3.37 Ohms for 10 wt% FEC over 2 months. Power law modeling of this long-term interphase resistance finds mixed transport-reaction growth behavior in FEC-free cells, suggesting significant dissolution, whereas cells with 10 wt% FEC added display a diffusion-controlled impedance growth behavior, suggesting a robust surface passivation film. Post-mortem FTIR and XPS confirm polycarbonate enrichment of the SEI, which was discovered to predominantly emerge from FEC self-polymerization during the idle aging. When the Si electrodes aged with and without FEC are harvested and reassembled into full cells with the same electrolytes used at aging, the first-cycle coulombic efficiency is 71% for 0 wt% FEC versus 97% for 10 wt% FEC. Subsequent cycling maintains over 99.7% CE with 10 wt% FEC, surpassing the pre-aging CE of 98.8%. This elevated CE indicates better passivation provided by the polymer fragments formed during aging compared to electrochemically formed SEI where no strong polymer FTIR signal is found. The self-polymerization during idle aging with additives such as FEC is therefore an opportune in situ mechanism to further engineer in extending the life of Si-based batteries.

Explore related subjects

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

Sattajit Barua, Rownak J. Mou, Koffi P. C. Yao. 2025-11-30. Aging-driven in situ polymerization of FEC additive boosts the calendar-life of silicon anodes via surface passivation enhancement. https://arxiv.org/abs/2512.01084

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

Measuring chiral phonons

Chiral phonons are quantized vibrations where the atomic motion in a solid breaks improper rotation symmetries. In many cases, chiral phonons possess angular momenta and are therefore selective to circularly polarized light. Both fundamental and applied research efforts on chiral phonons have been gaining increasing attention owing to their importance in a variety of fields including spintronics, spin-selective chemical reactions, thermal transport, quantum information processing and biosensing, where the bi-directional spin-lattice coupling enabled by chiral phonons can be harnessed in new ways, and potentially lead to new functionalities. Thus far, the studies of chiral phonons across diverse materials platforms have evolved largely independently within these fields, but the experimental techniques are often interrelated. In this perspective, we present a detailed description, as well as advantages and disadvantages of the current approaches for experimentally measuring chiral phonons in chiral and achiral materials. We conclude with a discussion of new methods for measuring chiral phonons. Ultimately, this work seeks to offer an experimental guide for systematically investigating the properties of chiral phonons in various materials systems and applications.

cond-mat.mtrl-sci

A model of grain growth in UN integrating molecular dynamics, phase-field modeling, and uncertainty quantification

Grain growth kinetics and grain-boundary (GB) properties in uranium mononitride (UN) are investigated through an integrated multiscale framework combining molecular dynamics (MD), phase-field modeling, and surrogate-assisted uncertainty quantification. MD simulations yield GB energies for 27 symmetric tilt boundaries from 0--2000~K, which are consistent with available DFT values. The average GB energy is nearly temperature-independent below 1000~K and increases at higher temperatures. A mechanistic pore-drag model applied to the only available grain growth dataset for actinide nitrides yields a mobility reduction factor of $s \approx 0.93$--$0.99$, statistically indistinguishable from unity, confirming that pore drag is negligible under the experimental conditions. The intrinsic GB mobility is therefore extracted directly from the effective mobility, yielding $M_0 = 2.05\times10^{-15}$~m$^4$/(J$\cdot$s) and $Q_M = 0.89$~eV. Phase-field simulations conducted from 1500--2000~K confirm normal curvature-driven grain growth, with grain size distributions converging to the Hillert-like form. A surrogate-assisted global sensitivity analysis---combining principal component analysis, Gaussian process regression, and Sobol decomposition---reveals that the mobility prefactor $M_0$ dominates output variance at all times, followed by the activation energy $Q_M$, while the GB energy $\gamma$ contributes minimally. These results establish the first quantitative grain growth framework for UN and identify the reduction of uncertainty in $M_0$ and $Q_M$ as the highest-priority target for future experimental efforts.

cond-mat.mtrl-sci

Silicon Solar Cell Design for >30% Efficiency via Singlet Fission

Singlet fission (SF) materials convert high-energy photons into multiple charge carriers, providing a route to exceed the efficiency limits of single-junction silicon solar cells without many of the complexities of multi-junction tandem designs. Following the first demonstration of an SF-enhanced silicon solar cell in 2025, there is a need to understand how SF materials can be effectively integrated into high-efficiency industrial silicon devices and translated from proof of concept to a manufacturable technology. Using coupled optical and electrical simulations, we assess the efficiency potential of several industrially relevant silicon cell architectures combined with SF materials. Interdigitated back-contact (IBC) cells offer the greatest potential for improvement due to unrestricted front-surface access and can achieve efficiencies exceeding 33%. However, performance is highly sensitive to front-surface passivation quality. Appropriate silicon design, particularly controlled surface doping and fixed interfacial charge, can mitigate recombination losses and relax passivation requirements for ultra-thin exciton-transfer layers.

cond-mat.mtrl-sci