SearcharxivSearch

arXiv · 2512.10920

Structural, physical, and Judd-Ofelt analysis of germanium magnesium-telluroborate glass containing different amounts of Tm2O3

Abstract

Germanium magnesium-telluroborate glasses with the composition 78B2O3-10GeO2-5TeO2-7-x MgO-xTm2O3, x = 0, 0.25, 0.5, 1, and 1.5 mol% were fabricated by using the melt quenching process. With the increase of Tm2O3 concentration, the density values increase from 3.574 to 4.153 g/cm^3, while the molar volume values decrease from 21.145 to 19.445 cm3/mol. Fourier transform infrared analysis supports the existence and conversion of BO3 and BO4. The conversion of BO3 to BO4 would lead to greater bridging oxygens BOs, influencing and reinforcing the glass network. The optical features were studied. The optical band gap decreased by increasing Tm2O3 content in the glass formula, while the index of refraction increased. The parameters take the values between 3.16 eV and 2.31 eV. Other optical and physical constants were determined like optical conductivity, electronegativity, metallization, reflection loss, steepness parameters, and transmission coefficient. Judd-Ofelt theory is used to estimate the optical intensities and line strengths of the present glasses. Radiative lifetimes and branching ratios are evaluated of different manifolds belonging to Tm3+ doped present glasses. The results showed the possibility of potential applications for these materials in the fields of laser development, Light-emitting diodes (LEDs), optical amplification and optoelectronic devices.

Explore related subjects

Keep this discovery

BibTeXRIS

A. A. El-Maaref, Kh. S. Shaaban, E. A. Abdel Wahab. 2025-12-11. Structural, physical, and Judd-Ofelt analysis of germanium magnesium-telluroborate glass containing different amounts of Tm2O3. https://arxiv.org/abs/2512.10920

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

Measuring chiral phonons

Chiral phonons are quantized vibrations where the atomic motion in a solid breaks improper rotation symmetries. In many cases, chiral phonons possess angular momenta and are therefore selective to circularly polarized light. Both fundamental and applied research efforts on chiral phonons have been gaining increasing attention owing to their importance in a variety of fields including spintronics, spin-selective chemical reactions, thermal transport, quantum information processing and biosensing, where the bi-directional spin-lattice coupling enabled by chiral phonons can be harnessed in new ways, and potentially lead to new functionalities. Thus far, the studies of chiral phonons across diverse materials platforms have evolved largely independently within these fields, but the experimental techniques are often interrelated. In this perspective, we present a detailed description, as well as advantages and disadvantages of the current approaches for experimentally measuring chiral phonons in chiral and achiral materials. We conclude with a discussion of new methods for measuring chiral phonons. Ultimately, this work seeks to offer an experimental guide for systematically investigating the properties of chiral phonons in various materials systems and applications.

cond-mat.mtrl-sci

A model of grain growth in UN integrating molecular dynamics, phase-field modeling, and uncertainty quantification

Grain growth kinetics and grain-boundary (GB) properties in uranium mononitride (UN) are investigated through an integrated multiscale framework combining molecular dynamics (MD), phase-field modeling, and surrogate-assisted uncertainty quantification. MD simulations yield GB energies for 27 symmetric tilt boundaries from 0--2000~K, which are consistent with available DFT values. The average GB energy is nearly temperature-independent below 1000~K and increases at higher temperatures. A mechanistic pore-drag model applied to the only available grain growth dataset for actinide nitrides yields a mobility reduction factor of $s \approx 0.93$--$0.99$, statistically indistinguishable from unity, confirming that pore drag is negligible under the experimental conditions. The intrinsic GB mobility is therefore extracted directly from the effective mobility, yielding $M_0 = 2.05\times10^{-15}$~m$^4$/(J$\cdot$s) and $Q_M = 0.89$~eV. Phase-field simulations conducted from 1500--2000~K confirm normal curvature-driven grain growth, with grain size distributions converging to the Hillert-like form. A surrogate-assisted global sensitivity analysis---combining principal component analysis, Gaussian process regression, and Sobol decomposition---reveals that the mobility prefactor $M_0$ dominates output variance at all times, followed by the activation energy $Q_M$, while the GB energy $\gamma$ contributes minimally. These results establish the first quantitative grain growth framework for UN and identify the reduction of uncertainty in $M_0$ and $Q_M$ as the highest-priority target for future experimental efforts.

cond-mat.mtrl-sci

Silicon Solar Cell Design for >30% Efficiency via Singlet Fission

Singlet fission (SF) materials convert high-energy photons into multiple charge carriers, providing a route to exceed the efficiency limits of single-junction silicon solar cells without many of the complexities of multi-junction tandem designs. Following the first demonstration of an SF-enhanced silicon solar cell in 2025, there is a need to understand how SF materials can be effectively integrated into high-efficiency industrial silicon devices and translated from proof of concept to a manufacturable technology. Using coupled optical and electrical simulations, we assess the efficiency potential of several industrially relevant silicon cell architectures combined with SF materials. Interdigitated back-contact (IBC) cells offer the greatest potential for improvement due to unrestricted front-surface access and can achieve efficiencies exceeding 33%. However, performance is highly sensitive to front-surface passivation quality. Appropriate silicon design, particularly controlled surface doping and fixed interfacial charge, can mitigate recombination losses and relax passivation requirements for ultra-thin exciton-transfer layers.

cond-mat.mtrl-sci