SearcharxivSearch

arXiv · 2512.12814

Observation of magnetically coupled electro-optic effect in LiNbO3/LiTaO3 at room temperature

Abstract

The magnetoelectric coupling effect serves as a crucial bridge between electrical and magnetic order parameters in condensed matter physics, forming the physical basis for the development of next-generation low-power information storage and sensing technologies. However, material systems exhibiting this effect at room temperature are extremely rare, and the coupling strength is typically very weak, which has long hindered the practical application of such phenomena despite their rich tunability. Here, we break this by reporting a pronounced magnetoelectric phenomenon,the magnetically coupled EO effect in the classic ferroelectric optical materials LiNbO3 and LiTaO3. We trace its origin to an unexpected source,the problematic direct current drift,a major reliability issue in photonic integrated circuits. We unambiguously demonstrate that this drift stems not from mobile ions but from defect-bound unpaired electrons, whose slow polarization relaxation is quenched upon the magnetic-field-induced formation of a room-temperature skyrmion states, as directly visualized by Lorentz transmission electron microscopy. This collective spin ordering not only solves the decades-old drift problem but also transforms the defect states into a magnetically responsive platform, exhibiting an efficiency up to 34 pm/V in LiNbO3 and 15 pm/V in LiTaO3-an orders-of-magnitude enhancement over conventional room-temperature magnetoelectric responses and even surpassing the materials' intrinsic Pockels coefficients. We also measured the magnetic response of this additional electro-optical effect and found that under the condition of applying a magnetic field of 0.1 T, an electro-optical coefficient adjustment of about 8 pm/V can be achieved (0.008 pm/V/Oe), which is equivalent to 30% of the electro-optical coefficient of LiNbO3 itself.

Explore related subjects

Keep this discovery

BibTeXRIS

Yalong Yu, Hengwei Zhang, Xiaoyan Liu, Tao Chu. 2025-12-14. Observation of magnetically coupled electro-optic effect in LiNbO3/LiTaO3 at room temperature. https://arxiv.org/abs/2512.12814

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

Measuring chiral phonons

Chiral phonons are quantized vibrations where the atomic motion in a solid breaks improper rotation symmetries. In many cases, chiral phonons possess angular momenta and are therefore selective to circularly polarized light. Both fundamental and applied research efforts on chiral phonons have been gaining increasing attention owing to their importance in a variety of fields including spintronics, spin-selective chemical reactions, thermal transport, quantum information processing and biosensing, where the bi-directional spin-lattice coupling enabled by chiral phonons can be harnessed in new ways, and potentially lead to new functionalities. Thus far, the studies of chiral phonons across diverse materials platforms have evolved largely independently within these fields, but the experimental techniques are often interrelated. In this perspective, we present a detailed description, as well as advantages and disadvantages of the current approaches for experimentally measuring chiral phonons in chiral and achiral materials. We conclude with a discussion of new methods for measuring chiral phonons. Ultimately, this work seeks to offer an experimental guide for systematically investigating the properties of chiral phonons in various materials systems and applications.

cond-mat.mtrl-sci

A model of grain growth in UN integrating molecular dynamics, phase-field modeling, and uncertainty quantification

Grain growth kinetics and grain-boundary (GB) properties in uranium mononitride (UN) are investigated through an integrated multiscale framework combining molecular dynamics (MD), phase-field modeling, and surrogate-assisted uncertainty quantification. MD simulations yield GB energies for 27 symmetric tilt boundaries from 0--2000~K, which are consistent with available DFT values. The average GB energy is nearly temperature-independent below 1000~K and increases at higher temperatures. A mechanistic pore-drag model applied to the only available grain growth dataset for actinide nitrides yields a mobility reduction factor of $s \approx 0.93$--$0.99$, statistically indistinguishable from unity, confirming that pore drag is negligible under the experimental conditions. The intrinsic GB mobility is therefore extracted directly from the effective mobility, yielding $M_0 = 2.05\times10^{-15}$~m$^4$/(J$\cdot$s) and $Q_M = 0.89$~eV. Phase-field simulations conducted from 1500--2000~K confirm normal curvature-driven grain growth, with grain size distributions converging to the Hillert-like form. A surrogate-assisted global sensitivity analysis---combining principal component analysis, Gaussian process regression, and Sobol decomposition---reveals that the mobility prefactor $M_0$ dominates output variance at all times, followed by the activation energy $Q_M$, while the GB energy $\gamma$ contributes minimally. These results establish the first quantitative grain growth framework for UN and identify the reduction of uncertainty in $M_0$ and $Q_M$ as the highest-priority target for future experimental efforts.

cond-mat.mtrl-sci

Silicon Solar Cell Design for >30% Efficiency via Singlet Fission

Singlet fission (SF) materials convert high-energy photons into multiple charge carriers, providing a route to exceed the efficiency limits of single-junction silicon solar cells without many of the complexities of multi-junction tandem designs. Following the first demonstration of an SF-enhanced silicon solar cell in 2025, there is a need to understand how SF materials can be effectively integrated into high-efficiency industrial silicon devices and translated from proof of concept to a manufacturable technology. Using coupled optical and electrical simulations, we assess the efficiency potential of several industrially relevant silicon cell architectures combined with SF materials. Interdigitated back-contact (IBC) cells offer the greatest potential for improvement due to unrestricted front-surface access and can achieve efficiencies exceeding 33%. However, performance is highly sensitive to front-surface passivation quality. Appropriate silicon design, particularly controlled surface doping and fixed interfacial charge, can mitigate recombination losses and relax passivation requirements for ultra-thin exciton-transfer layers.

cond-mat.mtrl-sci