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arXiv · 2601.04452

Processing-Dependent Near-Field Radiative Heat Transfer at Au/SiC Interfaces

A. Márquez·R. Esquivel-Sirvent
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Abstract

Thermal annealing is a widely used thin-film processing technique for modifying interfacial optical losses and electronic scattering in plasmonic materials. Here, we investigate how thermal annealing of gold thin films deposited on silicon carbide substrates influences interfacial near-field radiative heat transfer across nanoscale vacuum gaps. Using experimentally measured dielectric functions for annealed and unannealed Au films, we evaluate the spectral and total radiative heat flux between Au/SiC interfaces within a fluctuational electrodynamics framework. We show that annealing-induced changes in the low-frequency dielectric losses of Au significantly alter evanescent electromagnetic coupling at the interface, leading to enhancements of up to ~40\% in the total near-field radiative heat transfer at separations of tens of nanometers. Mode-resolved analysis reveals that this enhancement originates from strengthened coupling of overdamped plasmonic surface modes, which are highly sensitive to thin-film processing and interfacial microstructure. These results demonstrate that standard thermal annealing provides a practical route for tuning interfacial radiative heat transfer in metallic thin-film systems without modifying material composition or geometry, offering guidance for the design and interpretation of nanoscale thermal and plasmonic interfaces.

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A. Márquez, R. Esquivel-Sirvent. 2026-01-07. Processing-Dependent Near-Field Radiative Heat Transfer at Au/SiC Interfaces. https://arxiv.org/abs/2601.04452

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