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arXiv · 2601.13290

Epitaxial thin film growth in the U-Ge binary system

Syed Akbar Hussain·Ali A. M. H. Jasem·Lottie M. Harding·Ross S. Springell·Christopher Bell
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Abstract

We explore the U-Ge phase diagram using thin film growth by co-deposition of U and Ge via d.c. magnetron sputtering. Using three different single crystal substrates - MgO, CaF$_2$ and SrTiO$_3$ - we have stabilised mixed phase films of mostly UGe$_3$ and UGe, with evidence of UGe$_2$ as well. At higher temperatures UO$_2$ forms as a consequence of gettering of oxygen from several types of substrate. Several UGe$_3$ dominated samples grown on MgO substrates have also been characterised electrically, showing residual resistivity ratios up to six.

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Syed Akbar Hussain, Ali A. M. H. Jasem, Lottie M. Harding, Ross S. Springell, Christopher Bell. 2026-01-19. Epitaxial thin film growth in the U-Ge binary system. https://arxiv.org/abs/2601.13290

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