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arXiv · 2601.16313

Thermally-Activated Epitaxy of NbO

Sandra Glotzer·Jeong Rae Kim·Joseph Falson
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Abstract

We demonstrate a thermally-activated epitaxy window for the growth of NbO at temperatures exceeding 1000 $^o$C. NbO films grown in this mode display superior structural and transport properties, which are reproducible across a window of oxygen partial pressure. Through comprehensive analysis, we propose the prototypical electrical properties of NbO, for which a consensus has not yet been made. This study unequivocally demonstrates the utility of high temperatures in the thin film synthesis of refractory metal compounds.

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Sandra Glotzer, Jeong Rae Kim, Joseph Falson. 2026-01-22. Thermally-Activated Epitaxy of NbO. https://doi.org/10.1103/tv12-d5vs

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